| PART |
Description |
Maker |
| M38184AM-258FP M38184AM-256FP M38184MA-295FP M3818 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
Low-Power Configurable Multiple-Function Gate 6-DSBGA -40 to 85
Low-Power Ultra-Configurable Multiple-Function Gate with 3-State Outputs 8-US8 -40 to 85
Low-Power Ultra-Configurable Multiple-Function Gate with 3-State Outputs 8-SM8 -40 to 85
Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 3CX15-000A7 |
Grid driven RF amplifier
|
Communications & Power Industries, Inc.
|
| 3CX5000H3 |
Grid driven RF amplifier
|
Communications & Power Industries, Inc.
|
| 3CW5000F3 |
Grid Driven RF Amplifier
|
Communications & Power Industries, Inc.
|
| 3CX1500C7 |
Cathode driven RF amplifier
|
Communications & Power Industries, Inc.
|
| AON7232 |
Logic Level Driven
|
Alpha & Omega Semicondu...
|
| 3CX1000A7 |
Grid driven RF amplifier
|
Communications & Power Industries, Inc.
|
| UPA1952TE |
switching device, which can be driven directly by a 1.8 V
|
TY Semiconductor Co., Ltd
|
| STV9303 STV9303W |
PULSE DRIVEN VERTICAL BOOSTER
PULSE DRIVEN VERTICAL BOOSTER
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
